8GB DDR3 LAPTOP RAM TWINMOS-LV

Compared to the 4-bit pre-fetch design of DDR2 modules, the new-generation of DDR3 modules use an 8-bit pre-fetch design, representing a doubling over the DDR2 pre-fetch. Both DDR3 and DDR2 modules use a 240-pin-architecture, but compared to the DDR2 working voltage of 1.8V, the working voltage of DDR3 has been reduced to 1.5V, which helps increase the battery life for laptops. TWINMOS DDR3 1600MHZ PC312800 8GB L/T LV
NGN32,400
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  • Double Data Rate architecture
  • VDD = VDDQ = 1.5V ±0.075V
  • 1.5V center-terminated push/pull I/O
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Programmable CAS READ latency (CL)
  • Posted CAS additive latency (AL)
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
  • Programmable CAS latency
  • Bandwidth(max): 12.8GB/s
  • JEDEC standard
  • Serial Presence Detect support
  • MRS cycle with address key programs

          * CAS latency: 11 (clock)

          * Burst type: Sequential & Interleave

  • 2 variations of refresh

          *Auto refresh

          *Self refresh

8GB, 1600MHz, PC3-12800 DDR3 RAM

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